Structure description
Homofeneous doping on the 50x60 µm domain.
The laser beam illuminates the wafer at position (0,0) with a Gaussian radius of 1 µm (the symmetry is cylindrial).
EXCESS CARRIER concentration (/cm^3) plot with gmsh.
REAL part of the EXCESS TEMPERATURE concentration (/cm^3) plot with gmsh.
IMAGINARY part of the EXCESS TEMPERATURE concentration (/cm^3) plot with gmsh.
