Description

FSEM is a set of FreeFEM++ scripts and C++ code to solve the drift-diffusion (DD) semiconductor device equations by the finite element method (FEM).
It was initially developed for the nonlinear study of semiconductors under high optical injection but it will evolve toward a general purpose semiconductor device simulation.
FSEM is released under the GNU General Public License (GPL v2)

History

FSEM project was launched in the frawework of Fabian Dortu's PhD thesis in 2003.
The main objective was to compute the excess carrier concentration and temperature in semiconductor structures under intense laser light illumination taking into account nonlinear recombination and diffusion mechanisms.

About the Authors

Fabian Dortu is graduated in engineering from University of Liege
He is Currently (2002-2006) doing a PhD at University of Leuven in collaboration with IMEC.
(e-mail: Fabian.Dortu@imec.be) (web site: fdortu.fastmail.net).


Janusz Bogdanowicz is graduated in engineering from University of Liege.
He is currently (2006-...) doing a PhD at University of Leuven in collaboration with IMEC.
(e-mail: Janusz.Bogdanowicz@imec.be).

Mailing list

Any questions/comments regarding FSEM can be posted at this mailing list